2SC5702 데이터 시트보기 (PDF) - Renesas Electronics

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2SC5702

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Renesas Electronics 

2SC5702

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

(Ta = 25°C)

Symbol Min Typ Max Unit

Test Conditions

V(BR)CBO

15

18.5



V IC = 10 µA, IE = 0

ICBO





1

µA VCB = 10 V, IE = 0

ICEO





1

mA VCE = 4 V, RBE = ∞

IEBO





10

mA VEB = 1.5V, IC = 0

hFE

80 120 160

VCE = 1 V, IC = 5 mA

Cob

 0.85 1.2

pF VCB = 1 V, IE = 0

f = 1 MHz

fT

6.5 8.0



GHz VCE = 1 V, IC = 5 mA

f = 1 MHz

PG

11

13



dB VCE = 1 V, IC = 5 mA

f = 900 MHz

NF

 1.05 1.9

dB VCE = 1 V, IC = 5 mA

f = 900 MHz

Rev.2.00 Aug 10, 2005 page 2 of 14

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