Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC643A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
700
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
8.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A; IB=0.6A
VCB=500V;IE=0
VEB=5V; IC=0
1.5
V
10 μA
100 μA
hFE
DC current gain
IC=2A ; VCE=15V
5
固I电NC半H导A体NGE SEMICONDUCTOR fT
Transition frequency
IC=0.1A ; VCE=10V
2
MHz
2