2SD1249A 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1249A Datasheet PDF : 2 Pages
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Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
TC=25˚C
1.0
0.8
IB=14mA
12mA
10mA
0.6
8mA
6mA
0.4
4mA
0.2
2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1249, 2SD1249A
IC — VBE
4.0
VCE=10V
3.2
25˚C
TC=100˚C –25˚C
2.4
1.6
0.8
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
10
TC=100˚C
3
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current IC (A)
10000
3000
1000
hFE — IC
VCE=10V
300
TC=100˚C
100
25˚C
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
3
ICP
1
IC
0.3
0.1
t=10ms
1ms
300ms
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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