DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SD1255 데이터 시트보기 (PDF) - Panasonic Corporation

부품명
상세내역
제조사
2SD1255
Panasonic
Panasonic Corporation Panasonic
2SD1255 Datasheet PDF : 4 Pages
1 2 3 4
Power Transistors
2SD1255
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB932
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
1.5max.
1.1max.
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
0.8±0.1
0.5max.
q Large collector current IC
q N type package enabling direct soldering of the radiating fin to
2.54±0.3
/ the printed circuit board, etc. of small electronic equipment.
5.08±0.5
123
1:Base
2:Collector
3:Emitter
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
n d tage. ued Collector to base voltage
VCBO
130
V
le s ntin Collector to emitter voltage VCEO
80
V
a e cyc isco Emitter to base voltage
VEBO
7
V
n u t life ed, d Peak collector current
ICP
8
A
duc typ Collector current
IC
4
A
te tin ur Pro tinued Collector power TC=25°C
fo on dissipation
Ta=25°C
PC
35
W
1.3
wing disc Junction temperature
in n follo ned Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
a o s includestype, pla Electrical Characteristics (TC=25˚C)
c tinued ance Parameter
Symbol
Conditions
M is con inten Collector cutoff current
/Dis , ma Emitter cutoff current
D ance type Collector to emitter voltage
inten ance Forward current transfer ratio
Ma ainten Collector to emitter saturation voltage
ed m Base to emitter saturation voltage
(plan Transition frequency
ICBO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 3A, IB = 0.15A
IC = 3A, IB = 0.15A
VCE = 10V, IC = 0.5A, f = 10MHz
8.5±0.2
6.0±0.3
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
10
µA
50
µA
80
V
45
60
260
0.5
V
1.5
V
30
MHz
Turn-on time
Storage time
Fall time
ton
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
tstg
tf
VCC = 50V
0.5
µs
2.5
µs
0.15
µs
*hFE2 Rank classification
Rank
R
Q
hFE2
60 to 120 90 to 180
P
130 to 260
1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]