2SD1255 데이터 시트보기 (PDF) - Panasonic Corporation

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2SD1255

Silicon NPN epitaxial planar type

Panasonic Corporation 

Power Transistors

2SD1255

PC — Ta

IC — VCE

VCE(sat) — IC

50

40

(1)

30

(1) TC=Ta

(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(PC=1.3W)

8

10

TC=25˚C

7

IB=300mA

3

6

140mA

1

120mA

5

100mA

0.3

IC/IB=20

TC=100˚C

25˚C

4

60mA

0.1

–25˚C

20

40mA

3

0.03

20mA

2

0.01

10

(2)

(3)

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (˚C)

10mA

1

0

0 2 4 6 8 10 12

Collector to emitter voltage VCE (V)

0.003

0.001

0.01 0.03 0.1 0.3 1 3 10

Collector current IC (A)

e/ ) VBE(sat) — IC

c type 100

e. d IC/IB=20

n d tag ue 30

a e cle s contin 10

lifecy d, dis 3

n u duct type 1

TC=100˚C

te tin Pro ued –25˚C

ur tin 0.3

25˚C

g fo con 0.1

in n followin ed dis 0.03

es plan 0.01

a o lud e, 0.01 0.03 0.1 0.3 1 3 10

inc typ Collector current IC (A)

M isc/Discontimnuaeindtenance 10000

D ance type, 3000

inten nce 1000

Ma intena 300

d ma 100

(plane 30

Cob — VCB

IE=0

f=1MHz

TC=25˚C

10000

3000

1000

hFE — IC

VCE=2V

300 TC=100˚C

25˚C

100

–25˚C

30

10

3

1

0.01 0.03 0.1 0.3 1 3 10

Collector current IC (A)

ton, tstg, tf — IC

100

Pulsed tw=1ms

Duty cycle=1%

30

IC/IB=10(IB1=–IB2)

VCC=50V

10

TC=25˚C

3

tstg

1

tf

0.3

ton

10000

3000

1000

fT — IC

VCE=10V

f=10MHz

TC=25˚C

300

100

30

10

3

1

0.01 0.03 0.1 0.3 1 3 10

Collector current IC (A)

Area of safe operation (ASO)

100

Non repetitive pulse

TC=25˚C

30

10 ICP

IC

3

10ms

1

1ms

t=0.5ms

0.3

300ms

10

0.1

0.1

3

0.03

0.03

1

0.1 0.3 1 3 10 30 100

Collector to base voltage VCB (V)

0.01

0

1

2

3

4

5

Collector current IC (A)

0.01

1 3 10 30 100 300 1000

Collector to emitter voltage VCE (V)

2

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