2SD1258 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1258 Datasheet PDF : 2 Pages
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Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
0.5
TC=25˚C
IB=400µA
0.4
350µA
300µA
0.3
250µA
200µA
0.2
150µA
100µA
0.1
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1258
VCE(sat) — IC
IC/IB=25
10
3
TC=100˚C
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current IC (A)
VBE(sat) — IC
IC/IB=25
10
3
TC=100˚C
25˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current IC (A)
hFE — IC
10000
3000
1000
300
TC=100˚C
25˚C
–25˚C
100
VCE=4V
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
10000
3000
1000
fT — IC
VCE=4V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
3 ICP
1 IC
t=10ms
1ms
0.3
300ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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