2SD1221-Y(Q) 데이터 시트보기 (PDF) - Toshiba
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2SD1221-Y(Q) Datasheet PDF : 4 Pages
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IC – VCE
90
80
3.0
70
Common emitter
60
Tc = 25°C
50
40
2.0
30
20
IB = 10 mA
1.0
0
0
0
2
4
6
8
Collector-emitter voltage VCE (V)
hFE – IC
500
Common emitter
300
VCE = 5 V
Tc = 100°C
25
100
−25
50
30
10
0.03
0.1
0.3
1
3
Collector current IC (A)
2SD1221
IC – VBE
3.0
Common emitter
VCE = 5 V
2.0
1.0
Tc = 100°C 25 −25
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 10
0.3
Tc = 100°C
0.1
25
0.05
−25
0.02
0.03
0.1
0.3
1
3
Collector current IC (A)
24
(1)
20
16
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 mm × 50 mm × 0.8 mm
(3) No heat sink
12
8
4 (2)
(3)
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
3
Safe Operating Area
10
IC max (pulsed)*
5
IC max (continuous)
3
1 ms*
10 ms*
100 ms*
DC operation
(Tc = 25°C)
1
0.5
*: Single nonrepetitive pulse
0.3
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
1
3
10
VCEO max
30
100
Collector-emitter voltage VCE (V)
2010-05-19
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