2SD1137 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD1137

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1137

Silicon NPN Triple Diffused

Application

Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860

Outline

TO-220AB

1

23

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC (peak)

PC

PC * 1

Tj

Tstg

1. Base

2. Collector

(Flange)

3. Emitter

Rating

Unit

100

V

100

V

4

V

4

A

5

A

1.8

W

40

W

150

°C

–45 to +150

°C

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