2SD1251 데이터 시트보기 (PDF) - KEXIN Industrial

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2SD1251

Silicon NPN Triple Diffusion Junction Type

KEXIN Industrial 

SMD Type

Transistors

2SD1251,2SD1251A

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Collector-base cutoff current

ICBO VCB = 20 V, IE = 0

Emitter-base cutoff current

IEBO VEB = 8 V, IC = 0

Collector to emitter voltage

2SD1251

VCEO(sus) IC = 0.25 A, L = 25 mH

2SD1251A

Forward current transfer ratio

Forward current transfer ratio

VCE = 3 V, IC = 1 A

hFE

VCE = 3 V, IC = 0.1 A

Base-emitter voltage

VBE VCE = 3 V, IC = 1 A

Collector-emitter saturation voltage

VCE(sat) IC = 2 A, IB = 0.4 A

Transition frequency

fT VCE = 10 V, IC = 0.2 A, f = 0.5 MHz

Min Typ Max Unit

30 ìA

1 mA

60

80

30

160

40

1.2 V

1

V

1

MHz

hFE Classification

Rank

hFE

Q

30 60

P

50 100

O

80 160

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