2SD1105 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1105 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1105
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·High Power and High Reliability
APPLICATIONS
·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
30
A
200
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn
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