2SD1105 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1105 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1105
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V
MIN TYP. MAX UNIT
80
V
7
V
2
V
1.5 V
30 μA
40
40
120
1
MHz
hFE-2 Classifications
P
O
40-80
60-120
isc Website：www.iscsemi.cn
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