D1117 데이터 시트보기 (PDF) - Inchange Semiconductor

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D1117

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1117

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

VB E(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 0.5A

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 2A; VCE= 5V

MIN TYP. MAX UNIT

40

V

40

V

7

V

1.2

V

2.0

V

10 μA

10 μA

60

240

isc Website：www.iscsemi.cn

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