2SD1170 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1170 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1170
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 3mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 2V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1MHz
IE= -1A; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 30V, RL= 10Ω,
IC= 3A; IB1= -IB2= 3mA,
MIN TYP. MAX UNIT
120
V
1.5
V
2.0
V
10 μA
10 μA
2000
70
pF
50
MHz
0.5
μs
5.5
μs
1.5
μs
isc Website：www.iscsemi.cn
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