2SD1196 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD1196

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1196

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=5mA ; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=>

VCEsat Collector-emitter saturation voltage IC=4A, IB=8mA

VBEsat Base-emitter saturation voltage

IC=4A, IB=8mA

ICBO

Collector cut-offcurrent

VCB=80V;IE=0

IEBO

Emitter cut-offcurrent

VEB=5V;IC=0

hFE

DC current gain

IC=4A ; VCE=3V

fT

Transition frequency

Switching times

IC=4A ; VCE=5V

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=500IB1=-500IB2=4A

VCC=50V;RL=12.5E;

MIN TYP MAX UNIT

110

V

100

V

0.9

1.5

V

2.0

V

0.1

mA

3.0

mA

1500 4000

20

MHz

0.6

µs

4.8

µs

1.6

µs

2

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