2SD1252 데이터 시트보기 (PDF) - TY Semiconductor

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2SD1252

Silicon NPN Triple Diffusion Junction Type

TY Semiconductor 

SMD Type

Transistors

Product specification

2SD1252,2SD1252A

Features

Power transistors.

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SD1252

60

V

VCBO

2SD1252A

80

V

Collector-emitter voltage

2SD1252

60

V

VCEO

2SD1252A

80

V

Emitter-base voltage

VEBO

6

V

Collector current

IC

3

A

Peak collector current

ICP

5

A

Collector power dissipation

Ta = 25

Tc = 25

1.3

W

PC

35

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55 to +150

Unit: mm

1 Base

2 Collector

3 Emitter

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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