2SD1252 데이터 시트보기 (PDF) - TY Semiconductor

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2SD1252

Silicon NPN Triple Diffusion Junction Type

TY Semiconductor 

SMD Type

Transistors

Electrical Characteristics Ta = 25

Product specification

2SD1252,2SD1252A

Parameter

Collector-emitter voltage

2SD1252

2SD1252A

Base-emitter voltage

Collector-emitter cutoff current

2SD1252

2SD1252A

Collector-emitter cutoff current

2SD1252

2SD1252A

Emitter-base cutoff current

Forward current transfer ratio

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

2SD1252

2SD1252A

Turn-on time

Storage time

Fall time

Symbol

Testconditons

VCEO IC = 30 mA, IB = 0

VBE VCE = 4 V, IC = 3 A

ICES

VCE = 60 V, VBE = 0

VCE = 80 V, VBE = 0

ICEO

VCE = 30 V, IB = 0

VCE = 40 V, IB = 0

IEBO VEB = 6 V, IC = 0

VCE = 4 V, IC = 1 A

hFE

VCE = 4 V, IC = 3 A

VCE(sat) IC = 3 A, IB = 0.375 A

fT VCE = 5 V, IC = 0.5 A, f = 10 MHz

ton IC=1A

tstg IB1=-IB2=0.1 A

tf VCC=50V

Min Typ Max Unit

60

V

80

V

1.8 V

200 ìA

200 ìA

300 ìA

300 ìA

1 mA

40

250

10

1.2 V

30

MHz

25

MHz

0.5

ìs

2.5

ìs

0.4

ìs

hFE Classification

Rank

hFE

R

40 90

Q

70 150

P

120 250

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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