2SD1261 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1261 Datasheet PDF : 2 Pages
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Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
IC — VCE
10
TC=25˚C
8
IB=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
6
1.5mA
1.0mA
0.5mA
4
2SD1261, 2SD1261A
IC — VBE
10
VCE=3V
8
25˚C
6
TC=100˚C –25˚C
4
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
2
0
0
0.8
1.6
2.4
3.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=250
30
10
3
1 TC=100˚C
–25˚C
0.3
0.1
25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
hFE — IC
105
VCE=3V
104
TC=100˚C
103 25˚C
–25˚C
102
10
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
IC
3
1
t=10ms
1ms
300ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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