2SD1276 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1276 Datasheet PDF : 3 Pages
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Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0950 and 2SB0950A
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1276 VCBO
60
V
(Emitter open)
2SD1276A
80
Collector-emitter voltage 2SD1276 VCEO
60
V
(Base open)
2SD1276A
80
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
4
A
Peak collector current
ICP
8
A
Collector power
TC = 25°C PC
40
W
dissipation
2.0
Junction temperature
Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
■ Electrical Characteristics Ta = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1276 VCEO IC = 30 mA, IB = 0
60
V
(Base open)
2SD1276A
80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
VBE
2SD1276 ICBO
2SD1276A
Collector-emitter cutoff
current (Base open)
2SD1276 ICEO
2SD1276A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2 *
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
VCE = 3 V, IC = 3 A
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3 A, IB1 = 12 mA, IB2 = −12 mA,
VCC = 50 V
1 000
1 000
2.5
V
200 µA
200
500 µA
500
2
mA
10 000
2.0
V
4.0
20
MHz
0.5
µs
4.0
µs
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00190BED
1
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