2SD1445P 데이터 시트보기 (PDF) - Panasonic Corporation

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2SD1445P

Power Transistors Silicon NPN epitaxial planar type

Panasonic Corporation 

2SD1445, 2SD1445A

Power Transistors

PC  Ta

80

(1)TC=Ta

(2)With a 100×100×2mm

70

Al heat sink

(3)Without heat sink

(PC=2.0W)

60

50

(1)

40

30

20

(2)

10

(3)

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (˚C)

IC  VCE

10

TC=25˚C

IB=100mA

8

90mA

80mA

70mA

6

60mA

50mA

40mA

4

30mA

20mA

2

10mA

0

0123456

Collector to emitter voltage VCE (V)

VCE(sat)  IC

IC/IB=20

10

3

TC=100˚C

1

25˚C

0.3

–25˚C

0.1

0.03

0.01

0.1 0.3

1

3

10 30

Collector current IC (A)

VBE(sat)  IC

IC/IB=20

10

3

25˚C

1

–25˚C

0.3

TC=100˚C

0.1

0.03

0.01

0.1 0.3

1

3

10 30

Collector current IC (A)

1000

hFE  IC

VCE=10V

300

TC=100˚C

25˚C

100

–25˚C

30

10

3

1

0.1 0.3

1

3

10 30

Collector current IC (A)

1000

300

100

fT  IC

VCE=10V

f=10MHz

TC=25˚C

30

10

3

1

0.3

0.1

0.01 0.03 0.1 0.3 1 3 10

Collector current IC (A)

ton, tstg, tf  IC

100

Pulsed tw=1ms

Duty cycle=1%

30

IC/IB=30(IB1=–IB2)

VCC=30V

TC=25˚C

10

3

1

ton

0.3

tstg

0.1

tf

0.03

0.01

0

1

2

3

4

5

Collector current IC (A)

Area of safe operation (ASO)

100

30 ICP

10 IC

DC

3

Non repetitive pulse

TC=25˚C

t=10ms

t=1ms

1

0.3

0.1

0.03

0.01

1 3 10 30 100 300 1000

Collector to emitter voltage VCE (V)

2

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