2SD1436 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD1436

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1436(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC (peak)

PC * 1

Tj

Tstg

Rating

Unit

120

V

120

V

7

V

10

A

15

A

80

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 120 —

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE

1000 —

Collector to emitter saturation VCE (sat)1 —

—

voltage

VCE (sat)2

—

—

Base to emitter saturation

VBE (sat)1

—

—

voltage

VBE (sat)2

—

—

Turn on time

Ton

—

0.8

Turn off time

Toff

—

4.0

Note: 1. Pulse test.

Max Unit

—

V

—

V

100 µA

10

µA

20000

1.5 V

3.0 V

2.0 V

3.5 V

—

µs

—

µs

Test conditions

IC = 25 mA, RBE = ∞

IE = 200 mA, IC = 0

VCB = 120 V, IE = 0

VCE = 100 V, RBE = ∞

VCE = 3 V, IC = 5 A*1

IC = 5 A, IB = 10 mA*1

IC = 10 A, IB = 0.1 A*1

IC = 5 A, IB = 10 mA*1

IC = 10 A, IB = 0.1 A*1

IC = 5 A, IB1 = –IB2 = 10 mA

2

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