2SD1499 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1499 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=100V; IE=0
VEB=3V; IC=0
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A; VCE=5V
COB
Collector output capacitance
f=1MHz ; VCB=10V
hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
Product Specification
2SD1499
MIN TYP. MAX UNIT
100
V
2.0
V
1.8
V
50
μA
50
μA
20
40
200
20
20
MHz
170
pF
2
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