2SD1267 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1267 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1267 2SD1267A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter voltage
2SD1267
2SD1267A
IC=30mA ,IB=0
VCEsat Collector-emitter saturation voltage
IC=4A, IB=0.4A
VBE
Base-emitter voltage
IC=3A ; VCE=4V
IEBO
Emitter cut-off current
VEB=5V; IC=0
2SD1267 VCE=30V; IB=0
ICEO
Collector cut-off current
2SD1267A VCE=60V; IB=0
2SD1267
VCE=60V; VBE=0
ICES
Collector cut-off current
2SD1267A VCE=80V; VBE=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A; VCE=5V,f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=4A;IB1=-IB2=0.4A
VCC=50V
MIN TYP. MAX UNIT
60
V
80
1.5
V
2.0
V
1.0
mA
0.7
mA
0.4
mA
70
250
15
20
MHz
0.4
μs
1.5
μs
0.5
μs
hFE-1 Classifications
Q
P
70-150
120-250
2
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