2SD1268 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1268 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1268
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.1A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V; f= 10MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A; IB1= -IB2= 50mA;
VCC= 50V
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
10 μA
50 μA
45
60
260
30
MHz
0.5
μs
2.5
μs
0.15
μs
hFE-2 classifications
R
Q
P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
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