2SD1275 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1275 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1275 2SD1275A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1275
2SD1275A
IC=30mA , IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=8mA
VBE
Base-emitter voltage
VCE=4V; IC=2A
ICBO
Collector
cut-off current
2SD1275 VCB=60V; IE=0
2SD1275A VCB=80V; IE=0
Collector
ICEO
cut-off current
2SD1275 VCE=30V; IB=0
2SD1275A VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=2A ; VCE=4V
fT
Transition frequency
IC=0.5A; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000 4000-10000
MIN TYP. MAX UNIT
60
V
80
2.5
V
2.8
V
1.0 mA
2.0 mA
1000
2000
2.0 mA
10000
20
MHz
0.5
μs
4.0
μs
1.0
μs
2
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