2SD1274 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SD1274 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1274 2SD1274A 2SD1274B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage
IC=0.2A, L=25mH
VEBO
Emitter-base voltage
IE=1mA, IC=0
VCEsat Collector-emitter saturation voltage
IC=5A; IB=1A
VBE
Base-emitter voltage
IC=5A ; VCE=4V
2SD1274 VCB=150V; IE=0
ICBO
Collector cut-off current 2SD1274A VCB=200V; IE=0
2SD1274B VCB=250V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
tf
Fall time
IC=0.5A ; VCE=10V
IC=5A ;IB1=0.8A VEB=-5V
MIN TYP. MAX UNIT
80
V
6
V
1.6
V
1.5
V
1
mA
50
μA
14
40
MHz
1.0
μs
JMnic
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