2SD1276 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SD1276 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1276 2SD1276A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter
breakdown voltage
2SD1276
2SD1276A
VCEsat Collector-emitter saturation voltage
VBE
Base-emitter voltage
2SD1276
ICBO
Collector cut-off current
2SD1276A
2SD1276
ICEO
Collector cut-off current
2SD1276A
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
CONDITIONS
IC=30mA , IB=0
IC=3A IB=12mA
IC=5A IB=20mA
VCE=3V IC=3A
VCB=60V IE=0
VCB=80V IE=0
VCE=30V IB=0
VCE=40V IB=0
VEB=5V; IC=0
IC=3A ; VCE=0.5V
IC=3A ; VCE=3V
IC=0.5A;
VCE=10V;f=1MHz
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000 4000-10000
MIN
60
80
1000
2000
TYP.
MAX
2
4
2.5
0.2
0.2
0.5
0.5
2
UNIT
V
V
V
V
V
mA
mA
mA
mA
mA
10000
20
MHz
0.5
μs
4
μs
1
μs
JMnic
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