2SD1616G-X-T9S-K(2019) 데이터 시트보기 (PDF) - Unisonic Technologies
부품명
상세내역
제조사
2SD1616G-X-T9S-K Datasheet PDF : 5 Pages
| |||
2SD1616/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
2SD1616
60
Collector to Base Voltage
2SD1616A
VCBO
120
V
2SD1616
50
Collector to Emitter Voltage
2SD1616A
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
DC
IC
1
A
Pulse(Note2)
ICM
2
A
SOT-223
800
mW
SOT-89
Total Power Dissipation
SIP-3
PC
500
mW
400
mW
TO-92/TO-92SP
750
mW
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width10ms, Duty cycle<50%.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector to Base
2SD1616
Breakdown Voltage
2SD1616A
Collector to Emitter
2SD1616
Breakdown Voltage
2SD1616A
Emitter to Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Transition Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BVCBO IC=100μA, IE=0
BVCEO IC=10mA, IB=0
BVEBO
VCE (SAT)
VBE (SAT)
VBE (ON)
ICBO
IEBO
hFE1
hFE2
fT
Cob
tON
tSTG
tF
IE=10mA, IC=0
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE =2V, IC =50mA
VCB=60V
VEB= 6V
VCE =2V, IC =100mA
VCE =2V, IC=1A
VCE =2V, IC =100mA
VCB =10V, f =1MHz
VCE =10V, IC =100mA
IB1 = -IB2 =10mA
VBE(OFF) = -2 ~ -3V
MIN TYP MAX UNIT
60
V
120
V
50
V
60
V
6
V
0.15 0.3 V
0.9 1.2 V
600 640 720 mV
100 nA
100 nA
135
600
81
100 160
MHz
19 pF
0.07
μs
0.95
μs
0.07
μs
CLASSIFICATION OF hFE1
RANK
hFE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R201-008.K
Share Link: 