2SD1525 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1525 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1525
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A, IB= 0.2A
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
1.5
V
2.5
V
0.1 mA
IEBO
Emitter Cutoff current
VEB= 5V, IC= 0
10 mA
hFE-1
DC Current Gain
IC= 20A; VCE= 5V
1000
hFE-2
VECF
fT
COB
www.iscsemi.cn DC Current Gain
C-E Diode Forward Voltage
Current-Gain—Bandwidth Product
Output Capacitance
IC= 30A; VCE= 5V
200
IF= 10A
IC= 1A; VCE= 5V
10
IE= 0; VCB= 10V; ftest= 1MHz
500
3.0
V
MHz
pF
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IB1 = -IB2= 10mA; VCC= 50V;
RL= 10Ω
1.5
μs
10
μs
1.5
μs
isc Website：www.iscsemi.cn
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