2SD1571 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1571

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0

VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA

VBEsat Base-emitter saturation voltage

IC=0.5A; IB=50mA

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=10mA ; VCE=5V

hFE-2

DC current gain

IC=0.5A ; VCE=5V

fT

Transition frequency

IE=-0.1A ; VCE=10V

COB

Output capacitance

tf

Fall time

IE=0 ; VCB=10V;f=1MHz

IC=0.5A; IB1=-IB2=50mA

VCC=200V; RL=400Ω

Product Specification

2SD1571

MIN TYP. MAX UNIT

400

V

1.0

V

1.5

V

1

mA

1

mA

8

10

4

MHz

75

pF

1.0 μs

2

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