2SD1576 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1576 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1576
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector- Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
1500
V
700
V
6
V
2
A
ICM
Collector Current-Peak
6
A
IBM
Base Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2.5
A
2.5
W
80
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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