2SD1576 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1576 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1576
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 1A
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IE= 1mA; IC= 0
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
IC= 2A; VCE= 5V
5.0
V
1.5
V
6
V
50 μA
1.0 mA
2
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 0.5MHz
Switching times
2
MHz
tstg
Storage Time
tf
Fall Time
IC= 2.5A , IB= 1.1A; LB= 10μH
9.0 μs
1.0 μs
isc Website：www.iscsemi.cn
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