2SD1604 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1604 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1604
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 4A
·Complement to Type 2SB1104
APPLICATIONS
·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
12
A
40
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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