2SD1608 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1608 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1608
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 80mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB=B 8mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB=B 80mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
hFE
DC Current Gain
IC= 4A; VCE= 3V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A, IB1= -IB2= 8mA
MIN TYP. MAX UNIT
120
V
1.5
V
3.0
V
2.0
V
3.5
V
100 μA
10
μA
1000
20000
0.7
μs
6.0
μs
2.0
μs
isc Website：www.iscsemi.cn
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