2SD1751 데이터 시트보기 (PDF) - Panasonic Corporation
부품명
상세내역
제조사
2SD1751 Datasheet PDF : 2 Pages
| |||
Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1170
s Features
q High forward current transfer ratio hFE which has satisfactory
linearity
q Low collector to emitter saturation voltage VCE(sat)
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage VCEO
60
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
4
A
Collector current
IC
2
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
15
W
1.3
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 30V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 0.1A
VCE = 4V, IC = 1A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A
*hFE2 Rank classification
Rank
Q
P
hFE2
70 to 150 120 to 250
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
200
µA
300
µA
1
mA
60
V
35
70
250
1.2
V
2
V
20
MHz
0.2
µs
3.5
µs
0.7
µs
1
Share Link: 