2SD1773 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1773 Datasheet PDF : 2 Pages
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Power Transistors
80
70
60
(1)
50
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2W)
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8
IB=5mA 4mA
3mA
6
2mA
1mA
4
0.5mA
2
0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1773
VCE(sat) — IC
30
(1) IC/IB=500
(2) IC/IB=250
(3) IC/IB=100
TC=25˚C
10
(1)
3
(2)
1
(3)
0.3
0.1
0.1
0.3
1
3
10
Collector current IC (A)
VBE(sat) — IC
30
(1) IC/IB=500
(2) IC/IB=250
(3) IC/IB=100
TC=25˚C
10
3
(2)
(1)
(3)
1
0.3
0.1
0.1
0.3
1
3
10
Collector current IC (A)
30000
hFE — IC
VCE=3V
10000
TC=100˚C
3000
–25˚C
1000
25˚C
300
100
0.1
0.3
1
3
10
Collector current IC (A)
ton, tstg, tf — IC
100
30
10
tstg
Pulsed tw=1ms
Duty cycle=1%
IC/IB=500 (IB1=–IB2)
VCC=50V
TC=25˚C
3
tf
1
ton
0.3
0.1
0.03
0.01
012345678
Collector current IC (A)
Area of safe operation (ASO)
Rth(t) — t
100
Non repetitive pulse
102 (1) Without heat sink
(1)
TC=25˚C
(2) With a 100 × 100 × 2mm Al heat sink
30
ICP
10
10
(2)
IC
t=1ms
3
10ms
1
DC
1
0.3
0.1
10–1
0.03
0.01
10–2
1 3 10 30 100 300 1000
10–3
10–2
10–1
1
10
102
103
104
Collector to emitter voltage VCE (V)
Time t (s)
2
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