MGP20N40CL 데이터 시트보기 (PDF) - Motorola => Freescale
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MGP20N40CL Datasheet PDF : 5 Pages
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MGP20N40CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(IClamp = 10 mA, TJ = –40 to 150°C)
Zero Gate Voltage Collector Current
(VCE = 350 V, VGE = 0 V, TJ = 150°C)
(VCE = 15 V, VGE = 0 V, TJ = 150°C)
Resistance Gate–Emitter (TJ = –40 to 150°C)
Gate–Emitter Breakdown Voltage (IG = 2 mA)
Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = 150°C)
Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150°C)
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150°C)
u Forward Transconductance (VCE 5.0 V, IC = 10 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
Gate–Emitter Charge
Gate–Collector Charge
(VCC = 280 V, IC = 20 A,
VGE = 5 V)
Turn–Off Delay Time
Fall Time
m W (VCC = 320 V, IC = 20 A,
L = 200 H, RG = 1 K )
Turn–On Delay Time
Rise Time
m W (VCC = 14 V, IC = 20 A,
L = 200 H, RG = 1 K )
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
V(BR)CES
Vdc
370
405
430
ICES
mA
—
—
500
—
—
100
RGE
10k
16k
30k
W
V(BR)GES
11
13
15
"V
IECS
—
—
50
mA
V(BR)ECS
26
40
120
V
VGE(th)
V
1.0
1.7
2.2
0.75
—
1.8
VCE(on)
V
—
1.1
1.4
—
1.4
1.9
—
1.4
1.8
gfe
10
18
—
S
Cies
Coes
Cres
—
2800
—
pF
—
200
—
—
25
—
Qg
Qge
Qgc
td(off)
tf
td(on)
tr
—
45
80
nC
—
8.0
—
—
20
—
—
14
—
µs
—
4.0
—
—
2.0
—
µs
—
6.0
—
2
Motorola TMOS Power MOSFET Transistor Device Data
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