2SD1653 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1653

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1653

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= 5mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 0.6A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

tf

Fall Time

IC= 2A, IB1= 0.6A; IB2= -1.2A

MIN TYP. MAX UNIT

800

V

1500

V

7

V

8.0

V

1.5

V

10 μA

1.0 mA

8

0.4 μs

isc Website：www.iscsemi.cn

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