2SD1655 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1655 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1655
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A;IB=0.8A
IEBO
Emitter cut-off current
VEB=5V; IC=0
ICBO
Collector cut-off current
VCB=800V; IE=0
hFE
DC current gain
IC=1 A ; VCE=5V
fT
Transition frequency
tf
Fall time
IC=1 A ; VCE=10V
IC=4A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=50Ω
MIN TYP. MAX UNIT
800
1500
5.0
V
1.5
V
1.0 mA
10
μA
8
3
MHz
0.7
μs
2
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