2SD1761 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1761

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50μA , IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50μA , IC=0

VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A

VBEsat Base-emitter saturation voltage

IC=2A IB=0.2A

ICBO

Collector cut-off current

VCB=60V IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=5V

Cob

Output capacitance

IE=0 ; VCB=10V ,f=1MHz

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

Product Specification

2SD1761

MIN TYP. MAX UNIT

60

V

80

V

5

V

1.0

V

1.5

V

10

μA

10

μA

60

320

8

MHz

90

pF

2

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