2SD1848 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1848

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1848

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 500mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.2A

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

hFE-1

DC Current Gain

IC= 5A; IB=B 1.2A

VCB= 750V; IE= 0

VCB= 1500V; IE= 0

IC= 1A; VCE= 5V

hFE-2

DC Current Gain

IC= 5A; VCE= 10V

fT

Current-Gain—Bandwidth Product IC= 1A; VCE= 10V

VECF

C-E Diode Forward Voltage

Switching times, Resistive Load

IF= 6A

tstg

Storage Time

tf

Fall Time

IC= 5A; IB1= 1.2A; IB2= -2.4A;

VCC= 200V

MIN TYP. MAX UNIT

7

V

8.0

V

1.5

V

10 μA

1.0 mA

5

25

4.5

2

MHz

2.3

V

1.5

μs

0.2

μs

isc Website：www.iscsemi.cn

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