2SD1849 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1849 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1849
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-base breakdown voltage
IE=500mA ;IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.4A
8.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=6A; IB=1.4A
VCB=750V; IE=0
VCB=1500V; IE=0
1.5
V
10
μA
1.0 mA
hFE-1
DC current gain
IC=1A ; VCE=5V
5
25
hFE-2
DC current gain
IC=6A ; VCE=10V
4
fT
VF
Transition frequency
固IN电C半H导AN体GE SEMICONDUTOR Diode forward voltage
IC=1A ; VCE=10V;f=0.5MHz
IC=7A
2
2.0
MHz
V
2
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