2SD1881 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1881

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1881

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

800

V

VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A

5

V

VBEsat

ICBO

Base-emitter saturation voltage

Collector cut-off current

IC=8A ;IB=1.6A

VCB=800V ;IE=0

1.5

V

10 μA

IEBO

Emitter cut-off current

VEB=4V ;IC=0

40

130 mA

ICES

Collector cut-off current

VCE=1500V

1.0 mA

hFE-1

DC current gain

IC=1A ; VCE=5V

8

hFE-2

DC current gain

IC=8A ; VCE=5V

5

10

VF

tf

Diode forward voltage

固IN电C半H导AN体GE SEMICONDUTOR Fall time

IEC=10A

IC=6A; VCC=200V;

RL=33.3Ω;IB1=1.2A;IB2=-2.4A;

2

0.1 0.3

V

μs

2

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