2SD1895 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1895 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD1895
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA
VBEsat Base-emitter saturation voltage
IC=7A ;IB=7mA
ICBO
Collector cut-off current
VCB=160V; IE=0
ICEO
Collector cut-off current
VCE=140V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE -2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7A; VCC=50V
IB1=-IB2=7mA
MIN TYP. MAX UNIT
140
V
2.5
V
3.0
V
100 μA
100 μA
100 μA
2000
5000
30000
20
MHz
2.0
μs
6.0
μs
1.2
μs
hFE-2 classifications
Q
P
5000-15000 8000-30000
2
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