2SD188 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SD188 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD188
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ; IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=5A ; IB=0.5A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
100
V
100
V
6
V
2.0
V
2.5
V
0.1 mA
0.1 mA
30
120
10
MHz
2
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