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2SD2138AQ 데이터 시트보기 (PDF) - Panasonic Corporation

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2SD2138AQ Datasheet PDF : 4 Pages
1 2 3 4
Power Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2138A
Silicon NPN triple diffusion planar type darlington
For power amplication
Complementary to 2SB1418A
Features
Package
High forward current transfer ratio hFE which has satisfactory linearity.
Code
Allowing supply with the radial taping
MT-4-A1
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open)
VCBO
80
V
Pin Name
1. Base
2. Collector
3. Emitter
Collector-emitter voltage (Base open)
VCEO
80
V
e pe) Emitter-base voltage (Collector open)
VEBO
5
V
c e. d ty Collector current
IC
2
A
n d stag tinue Peak collector current
ICP
4
A
a e cle con Collector power dissipation
15
lifecy , dis TC = 25°C
PC
2.0
W
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storagetemperature
Tstg –55 to +150 °C
Internal Connection
C
B
E
wing foudriscontinu Electrical Characteristics TC = 25°C±3°C
in n s follo laned Parameter
Symbol
Conditions
a o lude e, p Collector-emitter voltage (Base open)
inc typ Base-emitter voltage
c tinued ance Collector-base cutoff current (Emitter open)
M is n ten Collector-emitter cutoff current (Base open)
/Disco main Emitter-base cutoff current (Collector open)
D ance type, Forward current transfer ratio
ainten nance Collector-emitter saturation voltage
M ainte Transition frequency
d m Turn-on time
(plane Turn-off time
VCEO
VBE
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)
fT
ton
toff
IC = 30 mA, IB = 0
VCE = 4 V, IC = 2 A
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 2 A
IC = 2 A, IB = 8 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 2 A, IB1 = 8 mA, IB2 = –8 mA,
VCC = 50 V
Min
80
1 000
2 000
Typ Max
2.8
100
100
100
10 000
2.5
20
0.4
4
Unit
V
V
mA
mA
mA
V
MHz
ms
ms
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Rank
Q
P
hFE2
2000 to 5000 4000 to 10000
Publication date : October 2008
SJD00248CED
1

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