D2012 데이터 시트보기 (PDF) - Toshiba
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D2012 Datasheet PDF : 5 Pages
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3.0
100
90
2.5
2.0
1.5
1.0
IC – VCE
80
70
60
50
40
30
20
IB = 10 mA
0.5
Common emitter
Tc = 25°C
0
0
1
2
3
4
5
6
7
Collector-emitter voltage VCE (V)
VCE (sat) – IC
Common emitter
1
IC/IB = 10
0.5
0.3
0.1
0.05
0.03
Tc = 100°C
25
−25
0.01
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current IC (A)
35
30
(1)
25
PC – Ta
(1) Ta = Tc Infinite heat sink
(2) No heat sink
20
15
10
5
(2)
0
0
25 50 75 100 125 150 175
Ambient temperature Ta (°C)
2SD2012
1000
500 Tc = 100°C
300
25
−25
100
50
30
hFE – IC
Common emitter
VCE = 5 V
10
0.01
0.03 0.05 0.1
0.3 0.5 1
3
Collector current IC (A)
IC – VBE
3.0
Common emitter
2.5
VCE = 5 V
2.0
1.5
1.0
Tc = 100°C 25 −25
0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Safe Operating Area
10
IC max (pulsed)*
5
3 IC max (continuous)
1 ms*
DC operation
Tc = 25°C
1
10 ms*
100 ms*
0.5
*: Single nonrepetitive pulse
0.3
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
0.1
1
3 5 10
30 50 100
300
Collector-emitter voltage VCE (V)
3
2009-12-01
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