2SD2079 데이터 시트보기 (PDF) - Toshiba

부품명

상세내역

제조사

2SD2079

Transistor Silicon NPN Triple Diffused Type (Darlington)

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat) (1)

VCE (sat) (2)

VBE (sat)

VCB = 100 V, IE = 0

VEB = 6 V, IC = 0

IC = 30 mA, IB = 0

VCE = 3 V, IC = 3 A

VCE = 3 V, IC = 5 A

IC = 3 A, IB = 6 mA

IC = 5 A, IB = 20 mA

IC = 3 A, IB = 6 mA

2SD2079

Min Typ. Max Unit

―

―

100

2000

1000

―

―

―

―

100

μA

―

2.5 mA

―

―

V

― 15000

―

―

1.1 1.5

V

1.3 2.5

1.7 2.5

V

Turn-on time

Switching time Storage time

Fall time

ton

IB1

Input

tstg

20 μs

IB2

Output

―

1.0

―

―

4.0

―

μs

VCC ≈ 30 V

tf

IB1 = −IB2 = 6 mA, duty cycle ≤ 1%

―

2.5

―

Marking

D2079

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-21

Share Link: