2SD2123 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SD2123 Datasheet PDF : 7 Pages
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2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
180
180
V
120
160
V
5
5
V
1.5
1.5
A
3
3
A
18
18
W
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD2122(L)/(S) 2SD2123(L)/(S)
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
180 —
—
180 —
—
V
IC = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
120 —
—
160 —
—
V
IC = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
—— V
IE = 1 mA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1*2
hFE2
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
Cob
capacitance
— — 10 — — 10 µA VCB = 160 V, IE = 0
60 — 200 60 — 200 A
VCE = 5 V, IC = 150 mA*1
30 — — 30 — —
VCE = 5 V, IC = 500 mA*1
——1
——1
V
IC = 500 mA,
IB = 50 mA*1
— — 1.5 — — 1.5 V
VCE = 5 V, IC = 150 mA*1
— 180 — — 180 — MHz VCE = 5 V, IC = 150 mA*1
— 14 — — 14 — pF VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by hFE1 as follows.
B
60 to 120
C
100 to 200
2
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