2SD2115S 데이터 시트보기 (PDF) - KEXIN Industrial

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2SD2115S

Silicon NPN Epitaxial

KEXIN Industrial 

SMD Type

Features

Low frequency power amplifier.

Transistors

Silicon NPN Epitaxial

2SD2115S

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

150

V

VCEO

60

V

VEBO

5

V

IC

2

A

ICP

2.5

A

PC

18

W

Tj

150

Tstg

-55 to +150

1 Base

2 Collector

3 Emitter

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Fall time

Symbol

Testconditons

V(BR)CBO IC = 1 mA, IE = 0

V(BR)CEO IC = 10 mA, RBE =

V(BR)EBO IE = 1 mA, IC = 0

ICBO VCB = 100 V, IE = 0

hFE VCE = 5 V,IC = 1.5 A

VCE(sat) IC = 1.5 A,IB = 0.05 A

VBE(sat) IC = 1.5 A,IB = 0.05 A

tf IC = 1.5 A,IB = -IB2 =50 mA

Min Typ Max Unit

150

V

60

V

5

V

10 ìA

150

0.8 V

1.3 V

0.6 ìs

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