2SD2033 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2033 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2033
DESCRIPTION
·Good Linearity of hFE
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Complement to Type 2SB1353
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
1.8
W
20
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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